Adjusting intensity of laser beam during laser operation on a semiconductor device

ABSTRACT

Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.

RELATED APPLICATION

This application is a divisional of U.S. Non-Provisional patentapplication 13/726,271, titled “ADJUSTING INTENSITY OF LASER BEAM DURINGLASER OPERATION ON A SEMICONDUCTOR DEVICE” and filed on Dec. 24, 2012,which is incorporated herein by reference.

BACKGROUND

As consumers continue to demand thinner, lighter, and smaller electronicdevices (e.g., televisions, personal computers, tablets, cellulartelephones, etc.), the premium placed on real-estate within such deviceshas grown. Accordingly, semiconductor manufacturers are pressed tocreate smaller and faster semiconductor circuits that also consume lesspower (e.g., to improve energy efficiency and/or reduce batteryconsumption). Circuitry comprising field-effect transistors (FETs), suchas complementary-metal-oxide-semiconductors (CMOSs), has grown inpopularity due to this demand for smaller, faster, and/or more energyefficient circuitry.

SUMMARY

This summary is provided to introduce a selection of concepts in asimplified form that are further described below in the detaileddescription. This summary is not intended to be an extensive overview ofthe claimed subject matter, identify key factors or essential featuresof the claimed subject matter, nor is it intended to be used to limitthe scope of the claimed subject matter.

One or more systems and techniques for adjusting the intensity of alaser beam applied to a semiconductor device are provided for herein. Insome embodiments, the laser beam is applied to the semiconductor deviceto perform an anneal operation, such as to heat one or more layers ofthe semiconductor device, for example. Typically, when a laser beam isapplied to a semiconductor device, some of the energy is reflected fromthe semiconductor device and some of the energy is absorbed by thesemiconductor device (e.g., causing the semiconductor device to increasein temperature). A degree to which the laser beam is reflected is afunction of, among other things, one or more properties of a material towhich the laser beam is directed. By way of example, in someembodiments, low emissivity films formed on a semiconductor devicereflect less energy than high emissivity films.

In some embodiments, the reflection intensity of the laser beam (e.g.,the magnitude at which the laser beam is reflected from thesemiconductor) is measured and an intensity at which the laser beam isapplied to the semiconductor device is adjusted as a function of thereflection intensity. That is, for example, the reflection intensity ofthe laser beam is measured while the laser beam is being applied to thesemiconductor device. Based upon this measurement changes are made tothe intensity at which the laser beam is applied to the semiconductor.In this way, in some embodiments, the intensity of the laser beamapplied to the semiconductor device is adjusted to compensate fordifferences in the material(s) to which laser beam is directed. Further,in some embodiments, the foregoing technique is utilized to controlthermal absorption by the semiconductor device (e.g., to control thetemperature of the semiconductor device during an anneal operation).

The following description and annexed drawings set forth certainillustrative aspects and implementations. These are indicative of but afew of the various ways in which one or more aspects are employed. Otheraspects, advantages, and/or novel features of the disclosure will becomeapparent from the following detailed description when considered inconjunction with the annexed drawings.

DESCRIPTION OF THE DRAWINGS

Aspects of the disclosure are understood from the following detaileddescription when read with the accompanying drawings. It will beappreciated that elements and/or structures of the drawings are notnecessarily be drawn to scale. Accordingly, the dimensions of thevarious features is arbitrarily increased and/or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of an example semiconductordevice.

FIG. 2 illustrates a flow diagram of an example method for adjusting anapplied intensity of a laser beam as a function of a reflectionintensity.

FIG. 3 illustrates a flow diagram of an example method for adjusting anapplied intensity of a laser beam as a function of a reflectionintensity.

FIG. 4 illustrates a flow diagram of an example method for adjusting anapplied intensity of a laser beam as a function of a reflectionintensity.

FIG. 5 illustrates an example system for treating a semiconductordevice.

FIG. 6 illustrates a cross-sectional view of an example laser and sensorfor measuring reflection intensity.

FIG. 7 is an illustration of an example computer-readable medium whereinprocessor-executable instructions configured to embody one or more ofthe provisions set forth herein are comprised.

FIG. 8 illustrates an example computing environment wherein one or moreof the provisions set forth herein is be implemented.

DETAILED DESCRIPTION

Embodiments or examples, illustrated in the drawings are disclosed belowusing specific language. It will nevertheless be understood that theembodiments or examples are not intended to be limiting. Any alterationsand modifications in the disclosed embodiments, and any furtherapplications of the principles disclosed in this document arecontemplated as would normally occur to one of ordinary skill in thepertinent art.

Semiconductors are formed using a variety of operations. Exampleoperations include, among other things, physical vapor deposition (PVD),chemical vapor deposition (CVD), atomic layer deposition (ALD), plating,epitaxially growing, etc. Another operation frequently utilized is ananneal operation, where the semiconductor device (e.g., or a portionthereof, such as a single layer of the semiconductor device) is heatedto change a property or properties of the semiconductor device. In someembodiments, one or more of such processes include the use of a laserconfigured to apply a laser beam to the semiconductor device. Forexample, in some embodiments, the anneal operation includes using alaser beam to heat the semiconductor device (e.g., or merely a portionof the semiconductor device).

As provided for herein, one or more systems and techniques for applyinga laser beam to a semiconductor device are provided. An intensity atwhich the laser beam is emitted by a laser is varied based upon a degreeto which the laser beam is reflected from the semiconductor device. Thatis, for example, a reflection intensity of the laser beam is measured,and an applied intensity of the laser beam is adjusted as a function ofthe reflection intensity. In this way, in some embodiments, a laser isdynamically controlled to adjust the applied intensity of the laser beamas a function of the material to which the laser beam is directed (e.g.,where various types, thickness, etc. of materials reflect variouspercentages of the laser beam or electromagnetic radiation of the laserbeam). In other embodiments, the laser is dynamically controlled toadjust the applied intensity of the laser beam as a function oflocalized variations in the material (e.g., caused by defects during aformation of the semiconductor device or, more particularly, during aformation of a layer to which the laser beam is directed). In this way,in some embodiments, thermal absorption by the semiconductor device iscontrolled by adjusting the applied intensity of the laser beam (e.g.,to reduce piping defects or other defects caused by the semiconductordevice heating too rapidly or not heating to a desired temperature), forexample.

As used herein, applied intensity is generally intended to refer to amagnitude at which a laser beam is emitted from a laser. That is, forexample, applied intensity typically refers to a magnitude ofelectromagnetic radiation emitted from the laser.

Further, reflection intensity is generally intended to refer to amagnitude at which the laser beam is reflected from the semiconductordevice. That is, for example, reflection intensity typically refers to amagnitude of electromagnetic radiation that is reflected from thesemiconductor device when a laser is applied thereto.

Referring to FIG. 1, a cross-sectional view of an example semiconductordevice 100 at least partially formed by applying a laser beam to thesemiconductor device 100 is provided. In the illustrated embodiment, thesemiconductor device 100 is a field-effect transistor (FET), althoughthe instant application, including the scope of the claims, is notintended to be limited to a field-effect transistor. For example, inother embodiments, the semiconductor device 100 comprises resistors,capacitors, memory cells, light emitting diodes, etc.

The semiconductor device 100 is formed on a substrate 102 (e.g., awafer). In some embodiments, the substrate 102 is a silicon substrate.Other example materials for the substrate 102 include, among otherthings, germanium, diamond, silicon carbide, gallium arsenide, indiumarsenide, indium phosphide, etc. In some embodiments, an annealoperation is performed on the substrate 102 to allow dopants, such asboron, phosphorous, or arsenic, for example, to diffuse into thesubstrate.

The semiconductor device 100 comprises a gate stack 104, a source region112, and a drain region 114 formed on or within the substrate 102. Inthe example embodiment, the gate stack 104 comprises a gate dielectriclayer 106 and a gate electrode 108. The gate dielectric layer 106adjoins the substrate 102 and is comprised of a dielectric material,such as metal oxides, metal nitrides, metal silicates, transitionmetal-oxides, transition metal-nitrides, transition metal-silicates,oxynitrides of metals, metal aluminates, zirconium silicate, zirconiumaluminate, for example. The gate electrode 108 comprises one or morelayers, which includes interface layers, capping layers, and/orsacrificial layers, for example. By way of example, in some embodiments,the gate electrode 108 comprises a polysilicon layer. In someembodiments, one or more dopant materials, such as p-type dopants orn-type dopants, are added to the one or more layers of the gateelectrode 108, such as the polysilicon layer, for example. Exampletechniques for forming such layers include physical vapor deposition(PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD),and/or plating, for example.

In the illustrated embodiment, the gate stack 104 further comprises asilicide region 110 that is formed above the gate electrode (e.g., on adiametrically opposite side of the gate electrode 108 relative to thegate dielectric layer 106). In some embodiments, the silicide region 110is configured to reduce contact resistance at the gate stack 104 (e.g.,to reduce gate resistance), thereby affecting (e.g., improving) one ormore operating characteristics of the semiconductor device 100, forexample. Example materials for the silicide region 110 include metalsilicides, such as cobalt silicide, titanium silicide, nickel silicide,platinum silicide, tantalum silicide, tungsten silicide, etc., forexample. In some embodiments, the silicide region 110 is formed bydepositing a layer of metal and performing an anneal operation on themetal to convert the metal into a metal silicide, such as by reactingthe metal with polysilicon of the gate electrode 108, for example. Inother embodiments, other suitable techniques are utilized to form thesilicide region 110.

The source region 112 is typically formed in the substrate 102 on afirst side of the gate stack 104 and the drain region 114 is typicallyformed in the substrate 102 on a diametrically opposite side of the gatestack 104. The source region 112 and the drain region 114 respectivelycomprise a semiconductor material, such as a monocrystallinesemiconductor material. In some embodiments, the source region 112 andthe drain region 114 comprise a substantially same semiconductormaterial. In other embodiments, the source region 112 comprises adifferent semiconductor material or a different concentration of thesemiconductor material relative to the drain region 114. In someembodiments, the source region 112 and the drain region 114 are formedby an implantation process to form/define the source 112 and the drain114 (e.g., wherein the implantation process introduces dopants, such asarsenic, phosphorous, boron, etc. into the substrate 102), for example.In other embodiments, other suitable techniques are utilized to form thesource region 112 or the drain region 114.

The example semiconductor device 100 further comprises sidewall spacers116, 118, which are formed on opposite sidewalls of the gate stack 104.In some embodiments, a first sidewall spacer 116 is comprised of one ormore layers of dielectric material and a second sidewall spacer 118 iscomprised of one or more layers of dielectric material. As an example,in some embodiments, the first sidewall spacer 116 and the secondsidewall spacer 118 respectively comprise two layers. A first layer ofthe two layers includes a nitride composition, such as silicon nitride,and the second layer of the two layers includes an oxide composition,such as silicon oxide, for example. Other example materials for one ormore layers of the first sidewall spacer 116 or the second sidewallspacer 118 include silicon carbide and silicon oxynitride, for example.In some embodiments, such sidewall spacers 116, 118 facilitate lateralelectric distance control, for example. In other embodiment, thesidewall spacers 116,118 facilitate defining the source region 112 andthe drain region 114, such as by directing implanted dopants intoparticular regions of the substrate 102, for example.

In the illustrated embodiment, the semiconductor device 100 furthercomprises a second silicide region 120 formed spatially proximate thesource region 112 and a third silicide region 122 formed spatiallyproximate the drain region 114. More particularly, the second silicideregion 120 is positioned on top of the source region 112 (e.g., to capthe source region 112) and the third silicide region 122 is positionedon top of the drain region 114 (e.g., to cap the drain region 114). Insome embodiments, the second silicide region 120 is configured to reducecontact resistance at the source region 112 (e.g., to reduce sourceresistance) and the third silicide region 122 is configured to reducecontact resistance at the drain region 114 (e.g., to reduce drainresistance), thereby affecting (e.g., improving) one or more operatingcharacteristics of the semiconductor device 100, for example. Examplematerials for the silicide regions 120, 122 include metal silicides,such as cobalt silicide, titanium silicide, nickel silicide, platinumsilicide, tantalum silicide, tungsten silicide, etc. In someembodiments, the second silicide region 120 and the third silicideregion 122 are formed by depositing a layer of metal and performing ananneal operation on the metal to convert the metal into a metalsilicide. In other embodiments, other suitable techniques are utilizedto form the second silicide region 120 and the third silicide region122.

In some embodiments, the semiconductor device 100 is electricallyisolated from one or more neighboring semiconductor devices (not shown)(e.g., such as other FETs) via an isolation layer. By way of example, inthe illustrated embodiment, the semiconductor device 100 is electricallyisolated from neighboring semiconductor devices via a first isolationlayer 124 located spatially proximate the source region 112 and a secondisolation layer 126 located spatially proximate the drain region 114. Inother embodiments, the semiconductor device 100 is electrically isolatedfrom neighboring semiconductor devices at merely the source region ormerely the drain region. As an example, in some embodiments, anisolation layer is formed proximate the source region 112 but not thedrain region 114. In at least some of these embodiments, the drainregion 114 of the semiconductor device 100 functions as a source or adrain for a second semiconductor device, for example. In still otherembodiments, no isolation layers are present between the semiconductordevice and other neighboring semiconductor devices. In some embodiments,such isolation layers 124, 126 are formed by respectively etchingrecesses in the substrate 102 and at least partially filling therecesses with a dielectric material or substantially non-conductivematerial.

FIG. 2 illustrates an example method 200 for adjusting the intensity ofa laser beam applied to a semiconductor device, such as thesemiconductor device 100 illustrated in FIG. 1, as a function of anintensity at which the laser beam is reflected from the semiconductordevice. In some embodiments, the example method 200 finds applicabilityto an anneal operation configured to apply a laser beam to thesemiconductor device to alter one or more properties of thesemiconductor device. As an example, in some embodiments, a laser isutilized as a heating element and is configured to emit a laser beamthat thermally alters the semiconductor device to form at least one ofthe substrate 102, a first silicide region 110, a second silicide region120, and a third silicide region 122 of the semiconductor device 100. Itis to be appreciated that while the specific reference is made herein toutilizing the laser or laser beam as part of an anneal operation, theinstant application, including the scope of the claims, is not intendedto be limited to use with an anneal operation.

At 202 in the example method 200 a laser beam is applied to thesemiconductor device. The laser beam is applied at a first appliedintensity and typically has a first wavelength. The magnitude of thewavelength is typically a function of the laser being utilized toperform the operation. For example, a ruby laser typically has awavelength of about 694 nm, a XeF laser typically has a wavelength ofabout 308 nm, a KrF laser typically has a wavelength of about 249 nm,and an ArF laser typically has a wavelength of about 193 nm. It is to beappreciated that the foregoing list of lasers are merely provided asexample types of lasers and that other lasers suitable for the processbeing performed on the semiconductor device are also contemplated.

Generally, the intensity of the laser beam that is applied to thesemiconductor device is in the range of between about 650 mJ/cm² toabout 1100 mJ/cm². However, in other embodiments, the intensity of thelaser beam that is applied to the semiconductor device is below about650 mJ/cm² or exceeds about 1100 mJ/cm². In some embodiments, the firstapplied intensity, or an intensity at which the laser beam is initiallyapplied to the semiconductor device is a function of the type ofmaterial to which the laser beam is directed (e.g., such as the type ofmetal). In some other embodiments, the first applied intensity, or anintensity at which the laser beam is initially applied to thesemiconductor device is a function of a thickness of the material towhich the laser beam is directed. In still other embodiments, that firstapplied intensity is selected at random or selected to be a (e.g., low)value to reduce a probability of undesirably heating the semiconductordevice.

It is to be appreciated that while reference is made herein to applyingthe laser beam to the semiconductor device, such terminology is intendedto include the possibility of the laser beam being applied to a mereportion of the semiconductor device or to multiple semiconductordevices. For example, with respect to an annealing operation, in someembodiments the laser beam is directed to merely a portion ofsemiconductor device to be annealed. Accordingly, applying the laserbeam to the semiconductor device is intended to encompass applying thelaser beam to less than all of the semiconductor device (e.g., such as amere portion of layer of the semiconductor device).

At 204 in the example method 200, a reflection intensity of the laserbeam is measured. The reflection intensity is indicative of a magnitudeat which the laser beam is reflected from the semiconductor device. Thatis, for example, the reflection intensity is indicative of theelectromagnetic radiation generated by the laser that was reflected bythe semiconductor device and thus not absorbed by the semiconductordevice. By way of example, in some embodiments, one or more sensors,such as a pyrometer, for example, are positioned spatially proximate thelaser to measure an amount of electromagnetic radiation reflected by thesemiconductor device and associated with the laser beam.

In some embodiments, measuring the reflection intensity of the laserbeam at 204 comprises filtering one or more wavelengths associated withthe laser beam from one or more wavelengths not associated with thelaser beam (e.g., so that the electromagnetic radiation that is measuredis associated with the laser and not associated with other lightsources). In this way, information from a portion of the light spectrumthat is not associated with the laser beam is discarded or otherwise notfactored into the measurement, for example (e.g., shielding light noiseor electromagnetic radiation from the measurement).

It is to be appreciated that the difference between the reflectionintensity and the applied intensity is approximately equal to an amountof energy absorbed by the semiconductor device. In some embodiments, theelectromagnetic radiation from the laser beam is converted to thermalenergy upon absorption, and thus the thermal absorption of thesemiconductor device can be approximated based upon the measuredreflection intensity, for example. By way of example, high emissivityfilms of a semiconductor device, such as high emissivity metals,typically reflect a greater percentage of the laser beam's energyrelative to low emissivity films, such as low emissivity metals.Accordingly, low emissivity films typically thermally absorb a largerpercentage of the laser beam's energy than higher emissivity films. Assuch, low emissivity films tend to increase in temperature more rapidlythan higher emissivity films when an identical laser beam is appliedthereto. Thus, by measuring the reflection intensity, an estimate of thethermal absorption can be derived and changes in the intensity can bemade to achieve a desired thermal absorption (e.g., or heating rate).

At 206 in the example method 200, an applied intensity of the laser beamis adjusted as a function of the reflection intensity. In this way, theapplied intensity is altered from a first applied intensity to a secondapplied intensity, that is different in magnitude than the first appliedintensity, based upon how much of the laser beam is being reflected fromthe semiconductor device. In some embodiments, the second appliedintensity is greater than the first applied intensity. In otherembodiments, the second applied intensity is less than the first appliedintensity. Typically, the wavelength of the laser beam remainssubstantially constant while adjusting the applied intensity, althoughin some embodiments the wavelength of the laser beams is also variedfrom time-to-time.

A degree to which the applied intensity is adjusted is a function of thereflection intensity of the laser beam. By way of example, in someembodiments, a desired reflection intensity is set (e.g., to achieve adesired thermal absorption). When the measured reflection intensity isgreater than the desired reflection intensity (e.g., indicating thatless of the laser beam's energy is being absorbed by the semiconductordevice than desired), the applied intensity is increased to increase theamount of energy that is absorbed by the semiconductor device, forexample. When the measured reflection intensity is less than the desiredreflection intensity (e.g., indicating that more of the laser beam'senergy is being absorbed by the semiconductor device than desired, thuspotentially resulting in the semiconductor device heating too quickly),the applied intensity is decreased to decrease the amount of energy thatis absorbed by the semiconductor device, for example.

In some embodiments, adjusting the applied intensity of the laser beamcomprises adjusting an amount of power supplied to a laser emitting thelaser beam. In other embodiments, an amount of power supplied to thelaser emitting the laser beam is held constant while the appliedintensity of the laser beam is adjusted. For example, in someembodiments, the current supplied to the laser and the voltage appliedto the laser are inversely changed to alter the applied intensity whilemaintaining a substantially constant power supply.

In some embodiments, one or more safeguards are provided to mitigatesubstantial changes in the applied intensity, such as due toabnormalities in the measured reflection intensity, for example. In someembodiments, for example, a first measurement of the reflectionintensity (e.g., a present measurement of the reflection intensity) iscompared to an average measurement of the reflection intensity todetermine a degree of deviation between the first measurement and theaverage measurement. When the degree of deviation falls within aspecified threshold, the applied intensity is adjusted. When the degreeof deviation does not fall within the specified threshold (e.g., thuspotentially indicating an abnormality in the measurement or thesemiconductor device) the applied intensity is not adjusted.

Moreover, in some embodiments, one or more safeguards are provided tomitigate substantial changes in the power supplied to the laser (e.g.,which result in performance degradation by the laser or a power supplyconfigured to supply power to the laser). That is, for example, in someembodiments, a range over which power supplied to the laser can beadjusted is limited. For example, in some embodiment, an adjustment tothe amount of power supplied to the laser is permitted if the level ofthe adjustment is within a permissible threshold and is not permitted ifthe level of the adjustment is not within the permissible threshold. Byway of example, in some embodiments, a threshold is set at ±10%. Thus,in such embodiments, a request to alter the power level by more than 10%is denied (e.g., or the power level is increased by no more than 10%)while a request to alter the power level by less than 10% is granted. Inother embodiments, other thresholds are set to limit power outputcompensation, for example.

In some embodiments, one or more acts of the example method 200 arerepeated a plurality of times during the operation of the laser. Forexample, in some embodiments, the reflection intensity is measured tensof thousands of times during the operation and adjustments to theapplied intensity are made accordingly as a function of the measuredreflection intensity. In some embodiments, the reflection intensity ismeasured in real-time (e.g., while the laser is emitting the laser beam)at least 21,000 times, for example, to facilitate making minuteadjustments to the applied intensity.

FIG. 3 illustrates another example method 300 for adjusting an intensityof a laser beam applied to a semiconductor device to perform anoperation, such as an anneal operation, inspection operation, etc.

At 302 in the example method 300, a reflection intensity of the laserbeam applied to the semiconductor device is measured. The reflectionintensity is indicative of a magnitude at which the laser beam isreflected from the semiconductor device. That is, for example, a laserbeam is applied to the semiconductor device and an amount of energyassociated with the laser beam that is reflected from the semiconductordevice is measured.

In some embodiments, the measured reflection intensity is merelyindicative of a reflection of the laser beam and is not indicative ofthe intensity of other electromagnetic radiation generated by one ormore other lights sources. By way of example, in the method 300,measuring the reflection intensity of the laser beam comprises filteringone or more wavelengths associated with the laser beam from one or morewavelengths not associated with the laser beam at 304. In this way, aportion of a spectrum electromagnetic radiation not associated with thelaser beam is excluded from the measurement of the reflection intensity,for example.

At 306 in the example method 300, the applied intensity of the laserbeam is adjusted as a function of the reflection intensity. That is, forexample, an amount of energy applied to the semiconductor device via thelaser beam is adjusted as a function of the reflection intensity. Theapplied intensity is adjusted upward or downward as a function of thereflection intensity. By way of example, in some embodiments, a desiredreflection intensity is specified. When the measured reflectionintensity is higher than the desired reflection intensity (e.g.,indicating that more energy is reflected from the semiconductor devicethan desired), the applied intensity is increased to increase the amountof energy that is absorbed by the semiconductor device. In this way,where the energy absorbed by the semiconductor device is converted toheat energy, increasing the applied intensity causes the rate at which asemiconductor device increases in temperature to increase, for example.When the measured reflection intensity is less than the desiredreflection intensity (e.g., indicating that less energy is reflectedfrom the semiconductor device than desired), the applied intensity isdecreased to decrease the amount of energy that is absorbed by thesemiconductor device. In this way, where the energy absorbed by thesemiconductor device is converted to heat energy, decreasing the appliedintensity causes the rate at which a semiconductor device increases intemperature to decrease, for example.

In the example method 300, adjusting the applied intensity of the laserbeam comprises adjusting an amount of power supplied to a laser emittingthe laser beam at 308. That is, the intensity at which the laser emitsthe laser beam is a function of the power supplied to the laser. Inother embodiments, an amount of power supplied to the laser emitting thelaser beam is held constant while the applied intensity of the laserbeam is adjusted. For example, in some embodiments, the current suppliedto the laser and the voltage applied to the laser are inversely changedto adjust the applied intensity while maintaining a substantiallyconstant power supply.

It is to be appreciated that, in some embodiments, the safeguardsdescribed with respect to example method 200 of FIG. 2 and/or otherfeatures described with respect to the example method 200 that do notcontradict with features of the example method 300 also findapplicability to the example method 300 but are not further describedwith respect to the example method 300 for purposes of brevity.Moreover, in some embodiments, features described with respect to theexample method 300 that do not contradict with features of the examplemethod 200 also find applicability to the example method 200.

FIG. 4 illustrates an example method 400 for an anneal operation,whereby a temperature of the semiconductor device is altered (e.g.,increased) by a heating element, such as a laser. In some embodiments,such an anneal operation is performed to form one or more metalsilicides, such as the metal silicide 110 of the gate stack, the metalsilicide 120 spatially proximate the source region 112, or the metalsilicide 122 spatially proximate the drain region 114, for example. Inother embodiments, an anneal operation is performed to introduce oractivate dopant in a substrate upon which the semiconductor is formed,such as the substrate 102, for example.

In some embodiments, prior to the anneal operation beginning, a layer ofmetal is formed on a structure comprising silicon, such as thesubstrate, gate electrode 108, source region 112, or drain region 114,for example. In some embodiments, the layer of metal is formed using aphysical vapor deposition (PVD) process. In other embodiments, the layerof metal is formed using a chemical vapor deposition (CVD) process.Example materials for the metal include cobalt, nickel, titanium,tantalum, platinum, tungsten, etc. Example materials for dopants thatmay be implanted and annealed or activated include boron, phosphorous,arsenic, etc. In some embodiments, the thickness of the layer of metalis a function of the application for the semiconductor device 100. Inother embodiments, the thickness of the layer of metal is a function ofwhere the layer of metal is formed in relation to other features of thesemiconductor device, such as gate, source, and drain, for example.

In some embodiments, the anneal operation described in the examplemethod 400 is performed in a single action. In other embodiments, theanneal operation is performed in a multi-act process, whereby respectiveportions of the layer of metal or dopants are heated multiple times.During at least a portion of the anneal operation, a laser is utilizedto apply a laser beam to the semiconductor device to form a metalsilicide from the layer of metal or to form a doped layer or region, forexample. In some embodiments, other heat sources, in addition to thelaser, are also utilized during at least some of the anneal operation tofurther alter a temperature of the semiconductor device (e.g., or regionof the semiconductor device in which the metal silicide or dopant regionor layer is formed), for example.

At 402 in the example method 400, a laser beam is applied to thesemiconductor device to anneal a layer of the semiconductor device. Thatis, for example, a laser beam is applied to the semiconductor device toheat or otherwise alter a property(ies) of the layer(s) of thesemiconductor device to which the laser beam is applied. For example, inthe method 400, applying the laser beam to the semiconductor device toanneal a layer of the semiconductor device comprises directing the laserbeam toward a metal layer of the semiconductor device to form a metalsilicide at 404. In other embodiments, applying the laser beam to thesemiconductor device to anneal a layer of the semiconductor devicecomprises directing the laser beam toward a portion of the semiconductordevice where a change in temperature is desired. In still otherembodiments, applying the laser beam to the semiconductor device toanneal a layer of the semiconductor device comprises directing the laserbeam to a substrate upon which the semiconductor device is formed.

In some embodiments, the wavelength of the laser beam is a function ofthe laser, although some lasers are configured to emit laser beams atmultiple different wavelengths. In some embodiments, the particularwavelength that is selected or particular laser that is selected is afunction of the type or thickness of a material to be annealed, forexample.

In some embodiments, an initial intensity of the laser beam that isapplied to the semiconductor device is a function of the type orthickness of the material to be annealed. In other embodiments, aninitial intensity of the laser beam is selected at random or selected tobe a low energy value (e.g., to mitigate the possibility of exposing thesemiconductor device to an energy level sufficient to cause pipingdefects or other defects, for example).

At 406 in the example method 400, a reflection intensity of the laserbeam is measured. The reflection intensity is indicative of a magnitudeat which the laser beam is reflected from the semiconductor device. Thatis, for example, the reflection intensity is indicative of the energy ofthe laser beam that has been reflected from the semiconductor device(e.g., and thus not absorbed by the semiconductor device or converted tothermal energy in the semiconductor device).

At 408 in the example method 400, the applied intensity of the laserbeam is adjusted as a function of the reflection intensity. That is, forexample, the magnitude at which the laser beam is emitted (e.g., andapplied to the semiconductor) is adjusted based upon the reflectionintensity.

By way of example, during an anneal operation, at least some of theenergy of the laser beam is intended to be absorbed by the semiconductordevice and converted to thermal energy. Accordingly, the laser beam isutilized to alter (e.g., increase) a temperature of the semiconductordevice (e.g., or a layer of the semiconductor device to which the annealoperation is directed). At 408 in the example method, a rate at whichthe semiconductor device changes temperature is altered by changing theapplied intensity. For example, when the measured reflection intensityexceeds a desired reflection intensity, the applied intensity isincreased to increase the amount of energy absorbed per unit time andincrease the rate at which the temperature of the semiconductor devicechanges. When the measured reflection intensity is below a desiredreflection intensity, the applied intensity is decreased to decrease theamount of energy absorbed per unit time and decrease the rate at whichthe temperature of the semiconductor device changes. Accordingly, insome embodiments, the amount of energy absorbed per unit time isdynamically adjusted based upon measurements of the reflectionintensity. Moreover, in some embodiments, the rate at which thetemperature of the semiconductor device changes is dynamically adjustedbased upon measurements of the reflection intensity.

It is to be appreciated that, in some embodiments, the safeguardsdescribed with respect to example method 200 of FIG. 2 and otherfeatures described with respect to the example method 200 and theexample method 300 that do not contradict with features of the examplemethod 400 also find applicability to the example method 400 but are notfurther described with respect to the example method 400 for purposes ofbrevity. Moreover, in some embodiments, features described with respectto the example method 400 that do not contradict with features of theexample method 200 also find applicability to the example method 200 andfeatures described with respect to the example method 400 that do notcontradict with features of the example method 300 also findapplicability to the example method 300.

Further, in some embodiments, one or more processes are performed afterthe anneal operation to further form the semiconductor device. Forexample, in some embodiments, a chemical wash is performed on thesemiconductor device to remove excess metal or dopants during or afterthe anneal operation.

FIG. 5 illustrates an example system 500 for treating a semiconductordevice 502 via a laser 504. In the illustrated embodiment, thesemiconductor device 502 comprises two FETs. However, in otherembodiments, a system comprising the features described herein isutilized to treat other semiconductor devices. In some embodiments, theexample system 500 is utilized for performing an anneal operation. Byway of example, in some embodiments, the laser 504 is configured toalter or change a temperature of at least a portion of the semiconductordevice 502. It is to be appreciated that the example system 500 is notintended to be drawn to scale.

The example system 500 comprises a laser 504 configured to apply a laserbeam 516 to the semiconductor device 502. In some embodiments, the laserbeam 516 emitted by the laser 504 performs an anneal operation on thesemiconductor device 502, or a portion thereof. For example, aspreviously described, in some embodiments, the laser 504 is configuredto direct the laser beam 516 toward a specified layer or layers of thesemiconductor device 502 to change or increase a temperature of thespecified layer or layers. Accordingly, in such embodiments, the laser504 is configured to emit a laser beam 516 having a wavelength thatheats the semiconductor device 502, or a portion thereof, such as ametal layer, for example.

In some embodiments, the laser 504 is a pulse laser configured tointermittently emit a laser beam 516 (e.g., where respective emissionsare followed by a resting period during which little to noelectromagnetic radiation is emitted). In other embodiments, the laser504 is a continuously emitting laser 504 configured to continuously emita laser beam 516 until a stopping criteria is met.

In the illustrated embodiment, the laser 504 is mounted to anarticulating arm 506 configured to maneuver the laser 504 relative tothe semiconductor device 502 (e.g., which in some embodiments isstationary). In other embodiments, the laser 504 is substantiallystationary while the semiconductor device 502 is moved on a conveyorbelt or other movable platform. In still other embodiments, both thelaser 504 and the semiconductor device 502 are moved during theoperation.

It is to be appreciated that by moving the laser 504 relative to thesemiconductor device 502, a surface or portion of the semiconductordevice 502 is effectively painted with the laser beam 516. For example,in some embodiments, the laser beam 516 emitted by the laser 504 isabout 11 mm in diameter. Accordingly, to treat (e.g., perform an annealoperation on) a portion of the semiconductor device 502 having a surfacearea greater than the diameter of the laser beam 516, such as a surfacearea of 40 mm², the laser 504 is moved relative to the semiconductordevice 502 to provide for applying the laser beam 516 to the 40 mm²portion of the semiconductor device 502.

In some embodiments, such as where the laser 504 is a pulse laser, theoperation is performed in a step-and-shoot manner. Accordingly, a firstpulse of electromagnetic radiation is emitted from the laser 504 whilethe semiconductor device 502 maintains a first orientation relative tothe laser 504, the laser 504 ceases emitting the laser beam 516 and theorientation of the semiconductor device 502 is moved relative to thelaser 504, and a second pulse of electromagnetic radiation is emittedfrom the laser 504 while the semiconductor device 502 maintains thesecond orientation relative to the laser 504. In other embodiments, suchas where the laser 504 is a continuous emitting laser, the laser 504continues to emit electromagnetic radiation while the orientation of thesemiconductor device 502 is changed relative to the laser 504.

The example system 500 further comprises a sensor 508 configured tomeasure a reflection intensity of the laser beam 516. That is, thesensor 508 is configured to measure a magnitude (of energy) at which thelaser beam 516 is reflected from the semiconductor device 502. In someembodiments, the sensor 508 is a pyrometer or other suitableelectromagnetic radiation measuring device.

In some embodiments, the sensor 508 is mounted spatially proximate thelaser 504. For example, in some embodiments, the sensor 508 wraps aroundan outer perimeter of a nozzle of the laser 504 to detect the reflectedportion of the laser beam 516. FIG. 6 illustrates an exampleconfiguration for the sensor 508 relative to the laser 504. Moreparticularly, FIG. 6 illustrates a cross-sectional view of the exampleconfiguration looking into a nozzle 510 of the laser 504 (e.g., suchthat a laser beam 516 would shoot out of the page). In the illustratedembodiment, the sensor 508 wraps around a circumference or outerperimeter of the nozzle 510 and is comprised of a plurality of sensorelements (e.g., represented by the cross-hatched pattern) respectivelyconfigured to measure the reflection intensity of a portion of the laserbeam 516 that impinges thereon. By combining the reflection intensitymeasured by respective sensor elements, a total reflection intensity ismeasured, for example.

It is to be appreciated that FIG. 6 illustrates merely one exampleconfiguration for positioning the sensor 508 relative to the laser 504or laser nozzle 510. For example, in other embodiments the sensor 504 ispositioned on merely one side of the laser nozzle 510. In still otherembodiments, the sensor 508 surrounds less than the total perimeter ofthe nozzle 510. Typically, the sensor 508 is placed spatially proximatethe laser 504 to promote detection of the reflected laser beam 516.However, in some embodiments, the sensor 508 is located away from thelaser 504. By way of example, in some embodiments, the sensor 508 islocated away from the laser 504 and one or more mirrors or otherreflective surfaces are configured to direct the reflected laser beam516 toward the sensor 508.

Returning to FIG. 5, in some embodiments, the sensor 508 is configuredto filter one or more wavelengths associated with the laser beam 516from one or more wavelengths not associated with the laser beam 516. Byway of example, in some embodiments, the sensor 508 comprises a physicalfilter that is placed between the semiconductor device 502 and one ormore sensor elements of the sensor 508. Such a physical filter isconfigured to attenuate electromagnetic radiation that is not associatedwith the laser beam 516 (e.g., to filter out electromagnetic radiationyielded from other light sources) and to allow electromagnetic radiationassociated with the laser beam 516 to pass through the filter and bedetected by the sensor element(s). In other embodiments, the sensor 508comprises an electronic filter configured to separate data or signalsgenerated by the sensor element(s) and indicative of electromagneticradiation that is associated with the laser beam 516 from data orsignals generated by the sensor element(s) and indicative ofelectromagnetic radiation that is not associated with the laser beam516, for example.

The example system 500 further comprises a controller 512 that is inoperable communication with the sensor 508. The controller 512 isconfigured to adjust an applied intensity of the laser beam 516 as afunction of the reflection intensity. That is, based upon an amount ofenergy that is reflected from the semiconductor device 502 and detectedby the sensor 508, the controller 512 is configured to adjust theintensity of the laser beam 516 that is applied to the semiconductordevice 502 (e.g., to achieve a desired energy absorption by thesemiconductor device 502). It is to be appreciated that detailsregarding such an adjustment are further described with respect to theexample methods 200, 300, and 400 and are therefore not described withrespect to the controller 512 for purposes of brevity. Accordingly, insome embodiments, the controller 512 is configured to perform at leastsome of the acts of example method 200, at least some of the acts ofexample method 300, or at least some of the acts of example method 400.

Moreover, in some embodiments, the controller 512 is configured toimplement at least some of the safeguards described with respect to theexample method 200 of FIG. 2. For example, in some embodiments, thecontroller 512 is configured to not adjust the applied intensity at agiven point in time when a degree of deviation between the reflectionintensity, as recently measured, and an average reflection intensitydoes not fall within a specified threshold. Accordingly, the controller512 is configured to mitigate adjustments made when the data or signalis indicative of an abnormal measurement or an abnormality in thesemiconductor device 502 (e.g., which is reflected in a larger thanaverage change in the reflection intensity), for example.

The example system 500 further comprises a power supply 514 configuredto supply power to the laser 504. In some embodiments, the controller512 is in operable communication with the power supply 514 and isconfigured to adjust the applied intensity by requesting a change in anamount of power supplied to the laser 504 via the power supply 514. Inother embodiments, the controller 512 is configured to request that thepower supply 514 alter the current supplied to the laser 504 and alterthe voltage 514 applied to the laser 504 inversely to alter the appliedintensity while maintaining a substantially constant power output, forexample. In still other embodiments, the controller 512 is configured toadjust the intensity of the laser beam 516 without the aid of the powersupply 514. For example, in some embodiments, the controller 512 isconfigured to utilize a filter to alter the intensity of the laser beam516 emitted by the laser 504 prior to being applied to the semiconductordevice 502.

Still another embodiment involves a computer-readable medium comprisingprocessor-executable instructions configured to implement one or more ofthe techniques presented herein. An example embodiment of acomputer-readable medium or a computer-readable device that is devisedin these ways is illustrated in FIG. 7, wherein the implementation 700comprises a computer-readable medium 708, such as a CD-R, DVD-R, flashdrive, a platter of a hard disk drive, etc., on which is encodedcomputer-readable data 706. This computer-readable data 706, such asbinary data comprising at least one of a zero or a one, in turncomprises a set of computer instructions 704 configured to operateaccording to one or more of the principles set forth herein. In someembodiments, the processor-executable computer instructions 704 areconfigured to perform a method 702, such as at least some of theexemplary method 200 of FIG. 2, at least some of the exemplary method300 of FIG. 3, or at least some of the exemplary method 400 of FIG. 4,for example. In some embodiments, the processor-executable instructions704 are configured to implement a system, such as at least some of theexemplary system 500 of FIG. 5, for example. Many such computer-readablemedia are devised by those of ordinary skill in the art that areconfigured to operate in accordance with the techniques presentedherein.

Although the subject matter has been described in language specific tostructural features or methodological acts, it is to be understood thatthe subject matter defined in the appended claims is not necessarilylimited to the specific features or acts described above. Rather, thespecific features and acts described above are disclosed as exampleforms of implementing the claims.

As used in this application, the terms “component”, “module,” “system”,“interface”, and the like are generally intended to refer to acomputer-related entity, either hardware, a combination of hardware andsoftware, software, or software in execution. For example, a componentincludes a process running on a processor, a processor, an object, anexecutable, a thread of execution, a program, or a computer. By way ofillustration, both an application running on a controller and thecontroller can be a component. One or more components residing within aprocess or thread of execution and a component is localized on onecomputer or distributed between two or more computers.

Furthermore, the claimed subject matter is implemented as a method,apparatus, or article of manufacture using standard programming orengineering techniques to produce software, firmware, hardware, or anycombination thereof to control a computer to implement the disclosedsubject matter. The term “article of manufacture” as used herein isintended to encompass a computer program accessible from anycomputer-readable device, carrier, or media. Of course, manymodifications may be made to this configuration without departing fromthe scope or spirit of the claimed subject matter.

FIG. 8 and the following discussion provide a brief, general descriptionof a suitable computing environment to implement embodiments of one ormore of the provisions set forth herein. The operating environment ofFIG. 8 is only one example of a suitable operating environment and isnot intended to suggest any limitation as to the scope of use orfunctionality of the operating environment. Example computing devicesinclude, but are not limited to, personal computers, server computers,hand-held or laptop devices, mobile devices, such as mobile phones,Personal Digital Assistants (PDAs), media players, and the like,multiprocessor systems, consumer electronics, mini computers, mainframecomputers, distributed computing environments that include any of theabove systems or devices, and the like.

Generally, embodiments are described in the general context of “computerreadable instructions” being executed by one or more computing devices.Computer readable instructions are distributed via computer readablemedia as will be discussed below. Computer readable instructions areimplemented as program modules, such as functions, objects, ApplicationProgramming Interfaces (APIs), data structures, and the like, thatperform particular tasks or implement particular abstract data types.Typically, the functionality of the computer readable instructions arecombined or distributed as desired in various environments.

FIG. 8 illustrates an example of a system 800 comprising a computingdevice 812 configured to implement one or more embodiments providedherein. In one configuration, computing device 812 includes at least oneprocessing unit 816 and memory 818. In some embodiments, depending onthe exact configuration and type of computing device, memory 818 isvolatile, such as RAM, non-volatile, such as ROM, flash memory, etc., orsome combination of the two. This configuration is illustrated in FIG. 8by dashed line 814.

In other embodiments, device 812 includes additional features orfunctionality. For example, device 812 also includes additional storagesuch as removable storage or non-removable storage, including, but notlimited to, magnetic storage, optical storage, and the like. Suchadditional storage is illustrated in FIG. 8 by storage 820. In someembodiments, computer readable instructions to implement one or moreembodiments provided herein are in storage 820. Storage 820 also storesother computer readable instructions to implement an operating system,an application program, and the like. Computer readable instructions areloaded in memory 818 for execution by processing unit 816, for example.

The term “computer readable media” as used herein includes computerstorage media. Computer storage media includes volatile and nonvolatile,removable and non-removable media implemented in any method ortechnology for storage of information such as computer readableinstructions or other data. Memory 818 and storage 820 are examples ofcomputer storage media. Computer storage media includes, but is notlimited to, RAM, ROM, EEPROM, flash memory or other memory technology,CD-ROM, Digital Versatile Disks (DVDs) or other optical storage,magnetic cassettes, magnetic tape, magnetic disk storage or othermagnetic storage devices, or any other medium which can be used to storethe desired information and which can be accessed by device 812. Anysuch computer storage media is part of device 812.

The term “computer readable media” includes communication media.Communication media typically embodies computer readable instructions orother data in a “modulated data signal” such as a carrier wave or othertransport mechanism and includes any information delivery media. Theterm “modulated data signal” includes a signal that has one or more ofits characteristics set or changed in such a manner as to encodeinformation in the signal.

Device 812 includes input device(s) 824 such as keyboard, mouse, pen,voice input device, touch input device, infrared cameras, video inputdevices, or any other input device. Output device(s) 822 such as one ormore displays, speakers, printers, or any other output device are alsoincluded in device 812. Input device(s) 824 and output device(s) 822 areconnected to device 812 via a wired connection, wireless connection, orany combination thereof. In some embodiments, an input device or anoutput device from another computing device are used as input device(s)824 or output device(s) 822 for computing device 812. Device 812 alsoincludes communication connection(s) 826 to facilitate communicationswith one or more other devices.

Although the subject matter has been described in language specific tostructural features and/or methodological acts, it is to be understoodthat the subject matter of the appended claims is not necessarilylimited to the specific features or acts described above. Rather, thespecific features and acts described above are disclosed as exampleforms of implementing the claims.

Various operations of embodiments are provided herein. The order inwhich some or all of the operations are described should not beconstrued as to imply that these operations are necessarily orderdependent. Alternative ordering will be appreciated by one skilled inthe art having the benefit of this description. Further, it will beunderstood that not all operations are necessarily present in eachembodiment provided herein.

It will be appreciated that layers, features, elements, etc. depictedherein are illustrated with particular dimensions relative to oneanother, such as structural dimensions and/or orientations, for example,for purposes of simplicity and ease of understanding and that actualdimensions of the same differ substantially from that illustratedherein, in some embodiments. Additionally, a variety of techniques existfor forming the layers, features, elements, etc. mentioned herein, suchas implanting techniques, doping techniques, spin-on techniques,sputtering techniques such as magnetron or ion beam sputtering, growthtechniques, such as thermal growth and/or deposition techniques such aschemical vapor deposition (CVD), for example.

Moreover, “exemplary” is used herein to mean serving as an example,instance, illustration, etc., and not necessarily as advantageous. Asused in this application, “or” is intended to mean an inclusive “or”rather than an exclusive “or”. In addition, “a” and “an” as used in thisapplication are generally be construed to mean “one or more” unlessspecified otherwise or clear from context to be directed to a singularform. Also, at least one of A and B and/or the like generally means A orB or both A and B. Furthermore, to the extent that “includes”, “having”,“has”, “with”, or variants thereof are used in either the detaileddescription or the claims, such terms are intended to be inclusive in amanner similar to the term “comprising”.

Also, although the disclosure has been shown and described with respectto one or more implementations, equivalent alterations and modificationswill occur to others skilled in the art based upon a reading andunderstanding of this specification and the annexed drawings. Thedisclosure includes all such modifications and alterations and islimited only by the scope of the following claims.

What is claimed is:
 1. A system for treating a semiconductor device,comprising: a laser configured to emit a laser beam that performs ananneal operation on the semiconductor device; and a sensor configured tomeasure a reflection intensity of the laser beam, the reflectionintensity indicative of a magnitude at which the laser beam is reflectedfrom the semiconductor device.
 2. The system of claim 1, comprising acontroller configured to adjust an applied intensity of the laser beamas a function of the reflection intensity, the applied intensityindicative of a magnitude at which the laser beam is emitted from thelaser.
 3. The system of claim 2, the controller configured to not adjustthe applied intensity when a degree of deviation between the reflectionintensity and an average reflection intensity does not fall within athreshold.
 4. The system of claim 2, the controller configured to adjustthe applied intensity by adjusting an amount of power supplied to thelaser.
 5. The system of claim 1, the laser configured to emit a laserbeam having a wavelength that heats the semiconductor device.
 6. Thesystem of claim 1, the sensor positioned spatially proximate the laser.7. The system of claim 1, the sensor comprising a pyrometer.
 8. Thesystem of claim 1, the sensor configured to filter one or morewavelengths not associated with the laser beam.
 9. The system of claim1, the laser configured to emit a laser beam having a wavelength thatheats a metal layer of the semiconductor device.
 10. A system fortreating a semiconductor device, comprising: a laser configured to emita laser beam that performs an anneal operation on the semiconductordevice; a sensor configured to measure a reflection intensity of thelaser beam; and a controller configured to adjust an applied intensityof the laser beam as a function of the reflection intensity.
 11. Thesystem of claim 10, the reflection intensity indicative of a magnitudeat which the laser beam is reflected from the semiconductor device andthe applied intensity indicative of a magnitude at which the laser beamis emitted from the laser.
 12. The system of claim 10, the controllerconfigured to adjust an amount of power supplied to the laser to adjustthe applied intensity.
 13. The system of claim 10, the sensor configuredto filter one or more wavelengths associated with the laser beam fromone or more wavelengths not associated with the laser beam.
 14. Thesystem of claim 10, the controller configured to compare a firstmeasurement of the reflection intensity to an average measurement of thereflection intensity over a specified period of time to determine adegree of deviation between the first measurement and the averagemeasurement.
 15. The system of claim 14, the controller configured toadjust the applied intensity when the degree of deviation falls within athreshold and not adjust the applied intensity when the degree ofdeviation does not fall within the threshold.
 16. A system for treatinga semiconductor device, comprising: a laser configured to apply a laserbeam to the semiconductor device; and a sensor configured to measure areflection intensity of the laser beam, wherein an intensity of thelaser beam emitted from the laser is a function of the reflectionintensity.
 17. The system of claim 16, a controller configured to adjustan applied intensity of the laser beam as a function of the reflectionintensity.
 18. The system of claim 17, the controller configured tocompare a first measurement of the reflection intensity to an averagemeasurement of the reflection intensity over a specified period of timeto determine a degree of deviation between the first measurement and theaverage measurement.
 19. The system of claim 18, the controllerconfigured to adjust the applied intensity when the degree of deviationfalls within a threshold and not adjust the applied intensity when thedegree of deviation does not fall within the threshold.
 20. The systemof claim 16, the laser beam having a wavelength that heats thesemiconductor device.